Designing A Hybrid Full Adder Circuit Based On The Combination Of Cmos And Set Transistors

admin August 20, 2018

Authors:

Seyed Mohammad Jalal Rastegar Fatemi,Nasim Goudarzi,Morteza Rostami,

DOI NO:

https://doi.org/10.26782/jmcms.2018.08.00012

Keywords:

single electron devices,tunnel bond, coulomb blockade,full adder,

Abstract

Abstract Single electron devices are new in Nano-electrics and are able to control currents on the scale of a single or multiple electrons. Relying on this ability, these devices have a potential capacity for mitigation of circuits' energy consumption. Nevertheless, it is anticipated that in a near future the manufacturing technologies will advance and these devices would become of extensive application in integrated circuits. The working basis of these devices is electron tunneling in a structure with Nano dimensions. The present paper firstly states the control mechanism of single electron displacement in a tunnel bond and secondly, investigates the manner of application of this mechanism in the most important single electron structures. According to the results, a hybrid full adder circuit has been simulated using the HSpice software. Overall, the results have shown that compared to previous works, the proposed hybrid circuit is advantageous in terms of power consumption and PDP. Key words: single electron devices, tunnel bond, coulomb blockade, full adder

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Author(s): Seyed Mohammad Jalal Rastegar Fatemi, Nasim Goudarzi, Morteza Rostami View Download